Gate Driver IC for GaN Power Device Suitable for 3D Power IC

This electronic document is three-dimensional(3D) power IC, which GaN power devices stacked with Si based gate driver IC, is attractive. There is a problem of false turn-on for GaN power devices. The one of the promising candidates for solving this problem is to provide negative power supply voltage for low side switch. In this paper, we propose gate driver IC for GaN power devices suitable for 3D power IC. The main feature of the proposed IC is to provide negative power supply voltage using Si-Cap(Capacitor fabricated on Si substrate) to easy to realize 3D IC. A diode connect p-MOSFET is used as a boot strap diode to avoid using external Schottky diode for power supply for gate driver for high side switch. The negative power supply voltage is generated by negative voltage generator block and this block consists of Si n-MOSFET and Si-Cap. We propose two types of the negative voltage generator. One is the inverted charge pump circuit consist of diode connected n- MOSFET and Si Cap. The other is diode connected n-MOSFET, Si Cap and resistor. Both proposed circuits require no extra signal in addition to gate drive signals. These circuits work well verified by circuit simulations. The letter is expected to higher efficiency operation.