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T. A. Bachmann
Also published under:T. Bachmann
Affiliation
College of Engineering, Mathematics and Physical Sciences, University of Exeter, Exeter, U.K.
Topic
Amorphous Carbon,Conductive Filaments,Heat Resistance,Memory Devices,Dependence Of Conductivity,Electrode,Endurance Cycling,Field Dependence,High Resistance State,Joule Heating Effect,Load Resistance,Memory Cells,Molecular Dynamics Simulations,Reversible Switching,Source Measure Unit,Switching Memory,Temperature Dependence Of Conductivity,Temperature Distribution,Atoms In Region,Carbon-based Devices,Conductive,Diamond-like Carbon,Dielectric Breakdown,Electrical Circuit,Good Scalability,Graphene,Heat Dissipation,High Resistance,High Speed,High-angle Annular Dark-field,Hot Spots,Local Distribution,Low Resistance State,Low Voltage,Memory Materials,Memory Technologies,Molecular Dynamics,Ohmic Behavior,Oscilloscope,Oxygen Ions,Parasitic Capacitance,Resistive Memory,Resistive Random Access Memory,Resistive Switching,Series Resistance,Switching Mechanism,Switching Pulses,Thermostat,Top Electrode,Trailing Edge,
Biography
T. A. Bachmann (S’17) received the B.Sc. and M.Sc. degrees in
material science from ETH Zurich, Zurich, Switzerland, in 2011, and 2013, respectively. He is currently working toward
the Ph.D. degree with the School of Engineering, Mathematics and Physical Sciences, University of Exeter, Exeter, U.K.
From May 2015 to December 2015, he was a Visitor in the Cloud and Computing Infrastructure Department, IBM Research Zurich, Zurich, Switzerland. His current research interests include finite element simulations of electronic devices, electrical and surface characterisation of memory devices, in particular for storage applications.
From May 2015 to December 2015, he was a Visitor in the Cloud and Computing Infrastructure Department, IBM Research Zurich, Zurich, Switzerland. His current research interests include finite element simulations of electronic devices, electrical and surface characterisation of memory devices, in particular for storage applications.