B. L. Bhuva

Technology Node,Supply Voltage,Linear Energy Transfer,Nominal Voltage,Charge Collection,Heavy Ions,Inverter,Shift Register,Static Random Access Memory,Storage Nodes,Circuit Design,Cross-sectional,Error Detection,Lawrence Berkeley National Laboratory,Overlayer,Single Event Upset,Function Of Voltage,Increase In Cross-section,Sensitive Areas,Sensitive Region,Threshold Voltage,Charge Diffusion,Counting Error,FinFET Technology,Incident Angle,Irradiation,Low Linear Energy Transfer,Cross-sectional Changes,Dose Concentration,Forward Error Correction,Incident Ions,Neutron Flux,Output Node,Radiation Source,22nm Fully-depleted Silicon-on-insulator,Active Region,Air Gap,Amount Of Charge,Bias Conditions,Carrier Mobility,Clock Period,Combinational Logic,Conventional Design,Data Retention,Decrease In Charge,Depletion Region,Diffusion Current,Drift Current,Fabrication Process,Fin Height,