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Goncal Badenes
Also published under:G. Badenes
Affiliation
Mediterranean Technology Park, ICFO Institut de Ciencies Fotoniques, Barcelona, Spain
Topic
Fusion Splicer,Broad Temperature Range,Broadband Source,Conventional Fibers,Cost Of Devices,Detection Step,Diversity Parameters,Electron Beam Lithography,Fiber Bragg Grating,Fiber Bragg Grating Sensors,Fringe Visibility,High Contrast,Interferometric,Light Confinement,Local Field,Localized Surface Plasmon,Multiple Cores,Nanomaterials,Objective Lens,Optical Fiber,Optical Spectrum Analyzer,Phase Difference,Phase Velocity,Photoluminescence Microscopy,Points In Region,Present Challenges,Scientific Applications,Separation Distance,Solid Region,Standard Single-mode Fiber,Surface-enhanced Raman Scattering,Transverse Plane,Two-photon Photoluminescence,Wavelength Shift,Gate Oxide,Gate Length,CMOS Technology,Nitride,Thermal Budget,Doping Profile,Gate Dielectric,Silicide,Threshold Voltage,Active Area,Series Resistance,Channel Length,Deep Submicron,Oxide Thickness,Transconductance,Transistor Performance,
Biography
Gonçal Badenes (S'91–M'92–SM'01) received the Ph.D. degree from the University of Barcelona, Spain, in 1993.
Prior to joining IMEC, Leuven, Belgium, in 1993, he worked at the Spanish National Microelectronics Center in Spain and the Fraunhofer Institute of Microelectronic Circuits and Systems in Germany. Until August 2002, he was managing the CMOS process and device integration group at IMEC. He has been directly involved in the development of the CMOS technologies ranging from 0.25 $\mu$ m down to 65 nm. He was also manager of the European projects HUNT, IMPACT and ARTEMIS which have as major objectives the development and optimization of 100-nm and 65-nm CMOS technologies for digital and RF applications. These projects are supported by the IST program of the European Commission and have the participation of the major European semiconductor manufacturers. He has recently joined the Institut de Ciències Fotòniques, Barcelona, where he is managing the Nanophotonics group. He has coauthored over 70 publications in journals and international conferences.
Dr. Badenes is also a technical working group member of the International Technology Roadmap for Semiconductors (ITRS).
Prior to joining IMEC, Leuven, Belgium, in 1993, he worked at the Spanish National Microelectronics Center in Spain and the Fraunhofer Institute of Microelectronic Circuits and Systems in Germany. Until August 2002, he was managing the CMOS process and device integration group at IMEC. He has been directly involved in the development of the CMOS technologies ranging from 0.25 $\mu$ m down to 65 nm. He was also manager of the European projects HUNT, IMPACT and ARTEMIS which have as major objectives the development and optimization of 100-nm and 65-nm CMOS technologies for digital and RF applications. These projects are supported by the IST program of the European Commission and have the participation of the major European semiconductor manufacturers. He has recently joined the Institut de Ciències Fotòniques, Barcelona, where he is managing the Nanophotonics group. He has coauthored over 70 publications in journals and international conferences.
Dr. Badenes is also a technical working group member of the International Technology Roadmap for Semiconductors (ITRS).