Topic
- Computing and Processing
- Components, Circuits, Devices and Systems
- Communication, Networking and Broadcast Technologies
- Power, Energy and Industry Applications
- Signal Processing and Analysis
- Robotics and Control Systems
- General Topics for Engineers
- Fields, Waves and Electromagnetics
- Engineered Materials, Dielectrics and Plasmas
- Bioengineering
- Transportation
- Photonics and Electrooptics
- Engineering Profession
- Aerospace
- Geoscience
- Nuclear Engineering
- Career Development
- Emerging Technologies
- Telecommunications
- English for Technical Professionals
Uygar Avci
Also published under:Uygar E. Avci, U. Avci, U. E. Avci
Affiliation
Intel Component Research, Hillsboro, OR, USA
Topic
Transition Metal Dichalcogenides,2D Materials,Atomic Layer Deposition,Endurance Cycling,Ferroelectric Materials,Ferroelectric Memory,Read Operation,Ultrahigh Density,2D Channel,2D Monolayer,Accumulation Of Defects,Atomic Layer Deposition Process,Back-end-of-line,Barrier Performance,Bottom Gate,Buffer Size,Channel Material,Circuit Simulation,Conventional Capacitors,Crystal Size,Crystallite,Deep Neural Network,Deep Neural Network Algorithm,Deep Neural Network Model,Delamination,Density Functional Theory,Density Functional Theory Calculations,Device Design,Device Gate,Device Model,Device Parameters,Dielectric Constant,Double Loop,Double-gate,Electrode,Electron Beam Lithography,Elevated Temperature,End Of Line,Energy Efficiency,Ferroelectric Films,Free Energy,Future Technologies,Gate Leakage,Gate Length,Gate Oxide,Global Buffer,Grain Size,Grazing Incidence X-ray Diffraction,Hardware Configuration,Heterostructures,
Biography
Uygar E. Avci (M’05) received the double major B.S. degrees in physics and electrical engineering from Bogazici University, Istanbul, Turkey, and the M.S. and Ph.D. degrees in applied physics from Cornell University, Ithaca, NY, USA, in 2003 and 2005, respectively. During his Ph.D. degree, he demonstrated the first experimental realization of backside flash memory.
He joined Intel’s Components Research in 2005, leading floating body cell (FBC) memory experimental device design and scaling that demonstrated industry-leading FBC memory cells. Since 2010, he has been involved in the opportunities that beyond-CMOS devices offer to either replace or augment CMOS. He is currently a Principal Engineer, leading the research for charge-based beyond-CMOS devices and circuits.
Dr. Avci was the recipient of the President’s Award. He served as the Fundamentals Class Chair and the Short Course Chair for the International SOI Conference in 2012 and 2013, respectively. He is an Associate Editor for the IEEE Transactions on Electron Devices.
He joined Intel’s Components Research in 2005, leading floating body cell (FBC) memory experimental device design and scaling that demonstrated industry-leading FBC memory cells. Since 2010, he has been involved in the opportunities that beyond-CMOS devices offer to either replace or augment CMOS. He is currently a Principal Engineer, leading the research for charge-based beyond-CMOS devices and circuits.
Dr. Avci was the recipient of the President’s Award. He served as the Fundamentals Class Chair and the Short Course Chair for the International SOI Conference in 2012 and 2013, respectively. He is an Associate Editor for the IEEE Transactions on Electron Devices.