Lida Ansari

Also published under:L. Ansari

Affiliation

Tyndall National Institute, UCC, Cork, Ireland

Topic

Density Functional Theory,First-principles,Transition Metal Dichalcogenides,Valence Band,2D Materials,2D Transition Metal Dichalcogenides,Atomic-scale Simulations,Band Bending,Band Gap Opening,Band Gap Values,Band Structure,Bismuth Nanowires,Carrier Mobility,Channel Length,Conduction Band,Contact Properties,Curves Of Devices,Defective Channel,Density Functional Theory Calculations,Density Of States,Device Concept,Device Performance,Electron Effective Mass,Electron Mass,Electronic Structure,Fault Position,Fermi Level,Field-effect Transistors,Future Generations,Gate Length,Generalized Gradient Approximation,Grain Boundaries,Hole Effective Mass,Impact Of Defects,Inductively Coupled Plasma,Local Density Approximation,MoS2 Film,Monolayer MoS2,N-type Doping,Nanoelectronics,Nanometers In Diameter,Nanowire Diameter,Nitrogen Plasma,Non-equilibrium Green’s Function,OFF State,Plasma Doping,Plasma Exposure,Polycrystalline Films,Presence Of Defects,Quantum Confinement,

Biography

Lida Ansari received the Ph.D. degree in microelectronics from the Electronics Theory Group (ETG), Tyndall National Institute, University College Cork, Cork, Ireland.
She is currently a Postdoctoral Researcher at the ETG, Tyndall National Institute. Her doctoral research work was focused on atomic-scale simulation of nanoelectronic devices.