Antonio Di Bartolomeo

Field-effect Transistors,2D Materials,Transfer Characteristics,Voltage-gated,Atomic Force Microscopy,Carrier Mobility,I-V Curves,N-type Conductivity,Photodetector,Schottky Barrier,Black Phosphorus,Carbon Nanotube Film,Carbon Nanotubes,Chemical Vapor Deposition,Conductive,Drain Current,Electron Beam Lithography,Flake Thickness,Memory Devices,Non-volatile Memory,Output Curves,Photocurrent,Schottky Diode,Transition Metal Dichalcogenides,Adsorption Of Gas Molecules,Air Molecules,Ambient Pressure,Apparent Barrier,Applied Gate Voltage,Atmospheric Pressure,Atomic Layer Deposition,Back-gate Voltage,Carbon-based Devices,Channel Area,Channel Conductance,Channel Length,Charge Carrier Mobility,Charge Carriers,Charge Trapping,Chemical Methods,Chemical Vapor Deposition Graphene,Clockwise Direction,Conduction Band,Conductivity Spectra,Contact Point,Contact Resistance,Cooper Pairs,Critical Current,Critical Temperature,Current Increases,