I. Ahsan

Also published under:Ishtiaq Ahsan

Affiliation

IBM Albany NanoTech, Albany, NY, USA

Topic

Computational Memory,Pulse Width,Deep Neural Network,14-nm CMOS,Analog Computing,Analog-to-digital Converter,Crossbar Array,Digital Unit,Impedance,Input Vector,Neural Network,Resistive Random Access Memory,SET Pulse,Amorphous,Dynamic Range,Error Propagation,Film Thickness,Hardware Accelerators,High Resistance,Intermediate State,Limited Resistance,Memory Elements,Memory Technologies,Non-volatile Memory,Number Of Chips,Process Improvement,Processing Unit,Pulse Program,Trailing Edge,Activation Function,Application Of Pulses,Array Of Unit Cells,Artificial Intelligence Applications,Bias Conditions,Binary Vector,Calibration Procedure,Circuitry,Class Vector,Conductive Filaments,Constant Pulse,Contact Resistance,Convolutional Neural Network,Correlation Plots,Current Mirror,Declarative Memory,Device Programming,Device Resistance,Digital Architecture,Effects Of Drift,Electrode,

Biography

Ishtiaq Ahsan received the bachelor’s degree from Bangladesh University of Engineering and Technology, Dhaka, Bangladesh, in 1999, and the master’s and Ph.D. degrees in electrical engineering from Arizona State University, Tempe, AZ, USA.
He has over 20 years’ experience in semiconductor research, development, and manufacturing across seven technology nodes. He currently leads the yield/characterization group in IBM’s semiconductor research facility in Albany, NY, USA.