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K. Barla
Also published under:Kathy Barla
Affiliation
Imec, Leuven, Belgium
Topic
Gate Length,Process Flow,Reciprocal Space Mapping,Selective Etching,Single Nanowire,Metal Gate,Sacrificial Layer,Subthreshold Slope,Band Gap,Band Offset,Blanket,Carrier Mobility,Channel Diameter,Device Channel,Device Structure,Drain Current,Electrical Performance,Electrostatic Control,Energy-dispersive X-ray Spectroscopy,Epitaxial,Excellent Control,Final Device,Final Shape,Final Width,Flow Stage,Footprint,Gate Dielectric,Gate Stack,High-resolution X-ray Diffraction,Lattice Mismatch,Metal Work Function,Optimization Process,Quality Factor,Quantum Confinement,Quantum Confinement Effect,Replacement Metal Gate,Sertraline,Shortest Length,Silicon Nanowires,Spacer Thickness,Stack Height,Subsequent Processing Steps,Superlattice,TCAD Simulation,Technology Node,Temperature Instability,Vertical Stacking,Contact Resistance,Gate Oxide,Thermal Budget,
Biography
Kathy Barla received the Ph.D. degree from Joseph Fourier University, Grenoble, France, in 1981.
Since 2012, she has been with imec, where she started as the Department Director of Unit Process and Modules. She is managing the development of process for different technologies.
Since 2012, she has been with imec, where she started as the Department Director of Unit Process and Modules. She is managing the development of process for different technologies.