Kristin De Meyer

Contact Resistance,Energy-dispersive X-ray Spectroscopy,Physical Vapor Deposition,Impedance,Schottky Barrier,Silicide,Atomic Layer Deposition,Conductive,Epitaxial,Parasite,Schottky Barrier Height,Schottky Diode,Amorphous Silicon,Barrier Layer,Bipolar Switching,Contact Interface,Direct Contact,Distribution Of Defects,Formation Of Contacts,Ga Doping,Gate Stack,Ge Concentration,Grain Boundaries,Low Budget,Low Work Function,Process Flow,RRAM Devices,Rapid Thermal Annealing,Reset Voltage,Si Doping,Si Substrate,Thermal Budget,Thermal Stability,Top Electrode,Transmission Line Model,Work Function,Activation Of The Si,Active GA,Advanced CMOS Technology,Amorphous,Amorphous Si,Amorphous Solid,Anatase,Asymmetric Distribution,Barrier Height,Boundary Edges,Burst Mode,CMOS Technology,Carrier Concentration,Carrier Transport,