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S. Adriaensen
Affiliation
Laboratoire de Microélectronique, Université catholique de Louvain, Louvain-la-Neuve, Belgium
Topic
Analog Circuits,Channel Length,Silicon-on-insulator,Threshold Voltage,Gate Length,High Temperature,Bias Conditions,Bias Point,Body Contact,Bulk Si,CMOS Process,Depletion Region,Drain Current,Effective Length,Electronic Circuits,Film Thickness,Gate Oxide,Low-frequency Noise,Magnetometer,Operational Amplifier,Partial Depletion,Silicide,Strong Inversion,Supply Voltage,Temperature Sensor,Total Harmonic Distortion,Transition Frequency,Active Zone,Actuator,Back-gate Voltage,Band Gap,Band States,Bias Current,Channel Width,Circuit Applications,Circuit Performance,Circuit Simulation,Corner Frequency,Current Mirror,Current Ratio,Current Voltage,Depletion Width,Design Approach,Design Procedure,Design Solutions,Design Techniques,Device Channel,Device Performance,Differential Pair,Digital Circuits,
Biography
Stéphane Adriaensen (S'03) was born in Brussels, Belgium, in 1976. He received the Electrical Engineer degree from the Université catholique de Louvain at Louvain-la-Neuve, Belgium, in 1998. He is currently working toward the Ph.D. degree in the Microelectronics Laboratory at the same university.
He is currently working on SOI lateral bipolar transistors. His primary research concerns the process optimization and modeling of these devices and their application in various analog integrated circuits such as bandgap circuits (voltage references), temperature sensors, amplifiers, current sources and magnetic sensors. These circuits are designed to operate in a high-temperature environment (up to 300 °C) and use a low supply voltage (LVLP applications) due to the SOI technology used in the laboratory.
He is currently working on SOI lateral bipolar transistors. His primary research concerns the process optimization and modeling of these devices and their application in various analog integrated circuits such as bandgap circuits (voltage references), temperature sensors, amplifiers, current sources and magnetic sensors. These circuits are designed to operate in a high-temperature environment (up to 300 °C) and use a low supply voltage (LVLP applications) due to the SOI technology used in the laboratory.