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Aryan Afzalian
Also published under:A. Afzalian, Arvan Afzalian
Affiliation
Imec, Leuven, Belgium
Topic
2D Materials,Density Functional Theory,Non-equilibrium Green’s Function,Transition Metal Dichalcogenides,Deformation Potential,Density Functional Perturbation Theory,Functional Theory,Nanosheets,Acoustic Phonons,Band Gap,Band Structure,Carrier Concentration,Carrier Mobility,Electron Phonon,Generalized Gradient Approximation,Graphene,Hamiltonian Matrix,Matrix Elements,Transport Simulations,Acoustic Branches,Advanced Density Functional Theory,Analog Applications,Analysis Approach,Ballistic Heat Transport,Ballistic Transport,Bending Mode,Black Phosphorene,Bond Breaking,Bond Rupture,Bottom Layer,Bottom Panel,Carrier Energy,Channel Length,Conduction Band,Crystalline Oxide,Degradation Characteristics,Device Architecture,Device Width,Digital Applications,Digital Circuits,Discovery Of Materials,Dispersive Electron,Downscaling,Drain Voltage,Eigenstates,Electron-phonon Interaction,Electronic Conductivity,Electronic States,Electronic Structure,Electronic Structure Calculations,
Biography
Aryan Afzalian received the degree in electro-mechanical engineering and the Ph.D. degree in electronic engineering from the Université catholique de Louvain (UCL), Louvain-la-Neuve, Belgium, in 2000 and 2006, respectively. From 2006 to 2009, he was a Post-Doctoral Research Fellow with Tyndall National Institute, Cork, Ireland. From 2009 to 2013, he was a Senior Research Associate with UCL. From 2013 to 2018, he was with the Research Division of TSMC, Leuven, Belgium. He is currently with IMEC, Leuven, researching on the atomistic modeling of advanced CMOS and beyond CMOS devices. He has over 18 years of experience in semiconductor device simulation and modeling, with specific expertise in quantum transport codes and algorithms (NEGF) and the physics of devices at the nanoscale. He has authored or co-authored over 100 technical publications in international conferences, journals, and books and holds 11 patents. He was a recipient of the 2001 AILV Award for his master’s thesis on SOI Image Sensors and the 2009 UCC Invention of the Year Awards for his work on Resonant Tunneling FETs.