Srimanta Baishya

Fermi Dirac,Drain Current,Energy Band,Subthreshold Swing,Transfer Characteristics,Device Performance,Double-gate,Gate Bias,Band Gap,Conventional Structure,Dielectric Constant,Field-effect Transistors,Gate Capacitance,Gate Dielectric,Tunnel Field-effect Transistors,Work Function,Band Bending,Barrier Width,Charge Density,Depletion Width,Device Simulation,Device Structure,Dielectric Permittivity,Doping Concentration,Figure Of Merit,High Bias,Increase In Temperature,Mobility Degradation,Negative Charge Density,Positively Charged,Semiconductor Industry,Shockley–Read–Hall,Subthreshold Slope,TCAD Simulation,Transconductance,Tunnel Junction,Accumulation Of Carriers,Attractive Forces,Band Diagram,Band Gap Energy,Bias Point,Bias Voltage,Carrier Mobility,Cavity Length,Channel Area,Channel Material,Charge Carriers,Charged Molecules,Compression Point,Conduction Band,