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Brinda Bhowmick
Also published under:B. Bhowmick
Affiliation
Department of ECE, National Institute of Technology, Silchar, Assam, India
Topic
Drain Current,Energy Band,Field-effect Transistors,Subthreshold Slope,Subthreshold Swing,Threshold Voltage,Tunnel Field-effect Transistors,Work Function,Double-gate,Fermi Dirac,Ferroelectric Layer,Gate Oxide,Metal Gate,Negative Capacitance,Simulated Data,Surface Potential,TCAD Simulation,Transfer Characteristics,Types Of Pain,Voltage-gated,Ambient Signals,Ammonium,Band Alignment,Band Diagram,Band Gap,Cadence,Carbon Monoxide,Carrier Mobility,Catalytic Metal,Channel Length,Channel Material,Charge Carriers,Chemical Vapor Deposition,Common-mode Rejection Ratio,Comparative Analysis,Concave Profile,Conversion Efficiency,Cross-modal,Current Division,Current Ratio,Cut Off,Dc Output Voltage,Deoxyribonucleic Acid,Device Performance,Device Simulation,Dielectric Constant,Dielectric Constant Values,Direct Current Voltage,Doping Concentration,Drain Contacts,
Biography
Brinda Bhowmick (Member, IEEE) received the Ph.D. degree from the National Institute of Technology Silchar, Silchar, India, in 2014.
She is currently an Associate Professor in electronics and communication engineering with the Department of NIT Silchar, Silchar, India. She has 80 international journals and 25 international conference articles to her credit. Her research interests include various semiconductor devices like TFET, FinFET, Graphene FETs, and device modeling.
Dr. Bhowmick has received the Visvesvaraya Young Faculty Research Fellowship in 2018.
She is currently an Associate Professor in electronics and communication engineering with the Department of NIT Silchar, Silchar, India. She has 80 international journals and 25 international conference articles to her credit. Her research interests include various semiconductor devices like TFET, FinFET, Graphene FETs, and device modeling.
Dr. Bhowmick has received the Visvesvaraya Young Faculty Research Fellowship in 2018.