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Basab Das
Also published under:B. Das
Affiliation
Department of Electronics and Communication Engineering, GIMT, Guwahati, India
Topic
Band Gap,Device Structure,Drain Current,Fermi Dirac,Subthreshold Swing,Threshold Voltage,Acceptor Concentration,Bottom Cell,Charge Transport Mechanism,Conversion Efficiency,Curie Temperature,Current Increases,Detection Of Biomolecules,Device Performance,Dielectric Constant,Doping Concentration,Effect Of Temperature,Effect Of Temperature Variation,Electron Charge,Ferroelectric Field-effect Transistor,Ferroelectric Materials,Figure Of Merit,Fill Factor,Gate Oxide,Gate Stack,Ginzburg-Landau Equation,High Voltage,Highest Sensitivity,Hot Electrons,Learning Algorithms,Memory Window,Mobility Degradation,Negative Capacitance,Negatively Charged,Numerical Simulations,On-off Ratio,Open-circuit Voltage,Open-circuit Voltage Voc,Oxide Capacitance,Passivation Layer,Perovskite Cells,Perovskite Solar Cells,Positively Charged,Presence Of Different Types,Sensitivity Of Biosensors,Sensitivity Of The Device,Short-circuit Current Density,Silicon Layer,Silicon Solar Cells,Simple Analytical Model,
Biography
Basab Das (Member, IEEE) received the B.Tech. degree from North-Eastern Hill University, Shillong, India, in 2010 and the M.Tech. degree from the Department of Electronics and Communication Engineering, NIT Silchar, Silchar, India, in 2014, where he is currently pursuing the Ph.D. degree.
He is currently an Assistant Professor with the Electronics and Communication Engineering Department, Girijananda Chowdhury Institute of Management and Technology, Guwahati, India. His research interests include simulation and modeling of MOS devices, HEMT, and ferroelectric material.
He is currently an Assistant Professor with the Electronics and Communication Engineering Department, Girijananda Chowdhury Institute of Management and Technology, Guwahati, India. His research interests include simulation and modeling of MOS devices, HEMT, and ferroelectric material.