Topic

Ibrahim Al-Ani

Also published under:Ibrahim A. M. Al-Ani

Affiliation

School of Engineering and Information Technology, UNSW Canberra, Canberra, Australia

Topic

Silicon Carbide,High Power,Strong Coupling,Strong Coupling Regime,Boron Atoms,Dark Current,Finite-difference Time-domain,Heterostructures,High Conductivity,Metasurface,Nanomaterials,Optoelectronic Devices,Photocurrent,Refractive Index,Refractory Material,Refractory Metals,Surface-enhanced Raman Scattering,Thermal Conductivity,Transition Metal,Transition Metal Dichalcogenides,Wide Bandgap Semiconductor,near-UV,2D Materials,Aluminum Nitrate,Bias Current,Carbon Atoms,Carrier Mobility,Chemical Vapor Deposition,Chromium,Color Centers,Color Purity,Color Vision,Conductive,Coupling Constant,Detection Of Substances,Direct Gap,Dotted Curve,Double Coupling,Electrode,Electron Beam Lithography,Excellent Thermal Conductivity,Exciton,Exciton Resonance,Finite-difference Time-domain Simulations,Gallium Nitride,Geometric Parameters,Growth In Ways,Harsh Conditions,High Index,High Melting Point,

Biography

Ibrahim Al-Ani (Member, IEEE) received the B.E. degree (Hons.) from the University of Diyala, Baqubah, Iraq, in 2015, and the M.Sc. degree in telecommunication engineering from the University of Malaya, Kuala Lumpur, Malaysia, in 2018. He holds the Ph.D. degree from UNSW/ADFA, Australia, specializing in nanophotonics engineering.
His research focuses on nanotechnology, fiber lasers, and microcontrollers, showcasing expertise in experimental skills and optical simulation tools.