Topic
- Computing and Processing
- Components, Circuits, Devices and Systems
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- Power, Energy and Industry Applications
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- Robotics and Control Systems
- General Topics for Engineers
- Fields, Waves and Electromagnetics
- Engineered Materials, Dielectrics and Plasmas
- Bioengineering
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- English for Technical Professionals
Guoqiang Bai
Affiliation
College of Opto-electronic Science and Engineering, National University of Defense Technology, Changsha, China
Topic
Back Edge,Circuit Simulation,Equivalent Circuit,Flat Top,High-voltage Generator,High-voltage Pulses,Load Resistance,Pulse Width,Rise Time,Voltage Pulses,Bottom Of Page,Control Pulse,Coupling Coefficient,Energy Accumulation,Essential Conditions,Feature Transformation,Frequency Response,Front Edge,Greater Impact,High-power Microwave,High-voltage Transformer,Industrial Applications,Inner Layer,Laplace Transform,Leakage Inductance,Magnetic Core,Military Applications,Nitrogen Pressure,Plasmapheresis,Pulse Amplitude,Pulse Duration,Pulse Generator,Pulse Response,Pulse Signal,Pulse Transformer,Pulse Waveform,Pulsed Source,Relative Permeability,Resonance Frequency,Time-domain Response,Transformation In Response,Transformer Winding,Voltage Signal,Voltage Source,
Biography
Guoqiang Bai was born in Hebei province, China, in 1981. He is a Master candidate of engineering in physical electronics from the National University of Defence Technology, Changsha, China.
His work is mainly on pulsed power technology.
His work is mainly on pulsed power technology.