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Xinbing Cheng
Also published under:Xin-Bing Cheng, X. Cheng
Affiliation
College of Advanced Interdisciplinary Studies, National University of Defense Technology, Changsha, China
Topic
Pulsed Power,Fast Switching,High Voltage,Pulse Generator,Pulse Width,Acrylonitrile Butadiene Styrene,Anodic Current,Anodic Current Density,Average Current Density,Beam Source,Blocking Voltage,Breakdown Field,Breakdown Strength,Carrier Mobility,Cathode Surface,Charging Time,Circuit Model,Circuit Parameters,Circuit Simulation,Coaxial Line,Coaxial Transmission Line,Collection Temperature,Continuous Operation,Current Spread,Cylindrical,Deionized Water,Device Parameters,Device Structure,Dielectric Constant,Diode Rectifier,Electric Field Enhancement,Electric Field Strength,Electrode Surface,Electron Beam,Electron Beam Source,Electron Current Density,Electron Emission,Energy Storage Density,External Circuit,External Magnetic Field,External Parameters,Fast Rise Time,Field Strength,Gas Pressure,Glycerol,Good Thermal Stability,Ground Plane,Heat Flux,High Dielectric Constant,High Permittivity,
Biography
Xinbing Cheng was born in Neijiang, Sichuan, China, in 1983. He received the B.S. degree in applied physics from the Huazhong University of Science and Technology, Wuhan, China, in 2006, and the M.S. and Ph.D. degrees in physical electronics from the National University of Defense Technology (NUDT), Changsha, China, in 2008 and 2012, respectively.
He is currently an Associate Professor with NUDT. His current research interests include pulsed power systems. He is also a member of the State Key Laboratory of Pulsed Power Laser Technology of China.
He is currently an Associate Professor with NUDT. His current research interests include pulsed power systems. He is also a member of the State Key Laboratory of Pulsed Power Laser Technology of China.