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Monzurul Alam
Also published under:Md Monzurul Alam, Muhammad Alam
Affiliation
Electrical and Computer Engineering Department, North Carolina Agricultural and Technical State University, Greensboro, NC, USA
Topic
Blocking Voltage,Drift Region,Silicon Carbide,Anode Layer,Back Side,Blister Formation,Breakdown Process,Buried Layer,Carrier Concentration,Carrier Lifetime,Catastrophic Breakdown,Characterization Techniques,Charge Imbalance,Conductance Modulation,Contact Resistance,Critical Current,Curve In Region,Dashed Line,Depletion Width,Device Operation,Doped Layer,Doping Profile,Effective Lifetime,Electric Field Profile,Electric Field Values,Electroplating,Figure Of Merit,Gate Oxide,Hot Spots,Imbalance In Levels,Infrared Imaging,Insulated Gate Bipolar Transistor,Maximum Electric Field,Maximum Field,Model Analysis,Numerical Simulations,Optical Tomography,Optimal Doping,Optimal Layer,Optimal Thickness,Perfect Balance,Photoresist,Polymer Insulation,Power Devices,Presence Of Devices,Presence Of Imbalance,Soft Breakdown,Solid Line,Spatial Resolution,Storage Operations,
Biography
Monzurul Alam received the B.Sc. degree in electrical and electronic engineering from the Bangladesh University of Engineering and Technology, Dhaka, Bangladesh, in 2006, the M.E. degree in electrical engineering from Tennessee State University, Nashville, TN, USA, in 2014. He is currently pursuing the Ph.D. degree with the School of Electrical and Computer Engineering and also with the Birck Nanotechnology Center, Purdue University, West Lafayette, IN, USA.