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Jonghyun Ahn
Affiliation
Memory Division, Samsung Electronics, Hwaseong, South Korea
Topic
Active Switches,Bank Group,Cyclic Redundancy Check,Design Techniques,Error Control,Error Detection,Host Side,Low-frequency Domain,Pattern Generator,Practical Techniques,Read Operation,Stable Performance,Test Pattern,Testing Coverage,Timing Diagram,Transaction Data,
Biography
Jonghyun Ahn received the B.S. degree in electrical and electronics engineering from Chungnam National University, Daejeon, South Korea, in 2009.
In 2009, he joined the Memory Division, Samsung Electronics, Hwaseong, South Korea, where he has been involved in server DRAM, and now engaged in the design of high-bandwidth memory-2 (HBM2), HBM2E, and HBM3. His research interests include low-power DRAM and circuit verification.
In 2009, he joined the Memory Division, Samsung Electronics, Hwaseong, South Korea, where he has been involved in server DRAM, and now engaged in the design of high-bandwidth memory-2 (HBM2), HBM2E, and HBM3. His research interests include low-power DRAM and circuit verification.