S. G. H. Anderson

Data Retention,Gate Dielectric,Hot Electrons,Fermi Level,Memory Array,Non-volatile Memory,Silicon Nanocrystals,Threshold Voltage,Atomic Layer Deposition,Charge Storage,Coulomb Blockade,Density Of States,Energy Levels,Fermi Level Pinning,Gate Stack,High Voltage,Memory Module,Metal Gate,Metal Oxide,Metal Work Function,Nanocrystals,Valence Band,Work Function,Ab Initio Calculations,Accurate Parameters,Al Atoms,Areal Coverage,Atomic Layer Deposition Cycles,Band Edge,CMOS Process,Charge Neutrality,Charge Trapping,Chemical Vapor Deposition,Conduction Band,Conduction Band Edge,Coverage Area,Current Injection,Dielectric Constant,Endurance Cycling,Equivalent Thickness,Extraction Parameters,Flash Memory,Function Of Time,Gate Electrode,Impact Of Density,Impact Of Size,Integration Scheme,Interfacial Bond,Interfacial Layer,Layoffs,