Changyong Ahn

Current Mirror,Impedance,Non-volatile Memory,Parasitic Capacitance,Voltage Spikes,Activation Energy,Adjacent Levels,Bias Current,Bias Voltage,Big Data Applications,Binary Search,CMOS Process,CMOS Technology,Capacitor Bank,Charge Amplification,Current Fluctuations,Current Reference,Current Source,Data Readout,Design Considerations,Detailed Schematic,Digital Control,Drift Coefficient,Effective Resolution,Effects Of Drift,Good Scalability,Heating Power,High Resistance,High-level Resistance,I-V Curves,Iterative Results,Levels Of Resistance,Load Current,Low Resistance,Low-dropout Regulator,Memory Technologies,Negative Spike,Non-volatile,Operation Principle,Phase Change Materials,Phase Margin,Readout Circuit,Readout Scheme,Resistant Cells,Rise Time,Search Algorithm,Sense Amplifier,Sharp Spikes,Threshold Switching,Timing Diagram,