Topic
- Computing and Processing
- Components, Circuits, Devices and Systems
- Communication, Networking and Broadcast Technologies
- Power, Energy and Industry Applications
- Signal Processing and Analysis
- Robotics and Control Systems
- General Topics for Engineers
- Fields, Waves and Electromagnetics
- Engineered Materials, Dielectrics and Plasmas
- Bioengineering
- Transportation
- Photonics and Electrooptics
- Engineering Profession
- Aerospace
- Geoscience
- Nuclear Engineering
- Career Development
- Emerging Technologies
- Telecommunications
- English for Technical Professionals
SuHeon Hong
Also published under:S. H. Hong, Su Heon Hong
Affiliation
Research Center for Time-domain Nano-functional Devices, Korea University, Seoul, Sungbuk, Korea
Topic
Contact Resistance,Silicon Nanowires,Activation Energy,Array Of Channels,Bulk Si,Carbon Nanotubes,Carbon Nanotubes Bundles,Carrier Mobility,Coplanar Waveguide,Device Width,Dielectrophoresis,Doping Concentration,Double-gate,Drain Current,Effective Contact Area,Electron Beam Lithography,Electroplating,Equivalent Circuit,Equivalent Circuit Model,Field-effect Transistors,GHz Frequency,Gate Dielectric,High Doping,Impedance Phase,Low Doping,Multi-walled Carbon Nanotubes,Nanowire Diameter,Nanowire FET,Oxide Layer,Parasitic Capacitance,Planar Devices,Radio Frequency Characterization,Saturation Current,Schottky Diode,Single-walled Carbon Nanotubes,Temperature-dependent Characteristics,Thermionic Emission,Transconductance,Types Of Pain,Voltage Drop,
Biography
SuHeon Hong received the B.S. and M.S. degrees in 2002 and 2004, respectively, from Korea University, Seoul, Korea, where he is currently working toward the Ph.D. degree at the Nano Electronics Laboratory and Research Center for Time-domain Nano-functional Devices, School of Electrical Engineering.
His current research interests include fabrication and characterization of nanodevices from bottom-up processes.
His current research interests include fabrication and characterization of nanodevices from bottom-up processes.