Peter Abramowitz

Gate Dielectric,Gate Leakage,Gate Oxide,Hot Electrons,Voltage-gated Channels,Activation Energy,Digital Applications,Drain Current,Erroneous Predictions,Exponential Dependence,Guard Band,Hot Injection,Power-law Dependence,Product Reliability,Technology Node,Thermal Resistance,Acceleration Parameter,Acceleration Voltage,Accurate Projections,Bond Breaking,Capture Cross Section,Charge Density,Critical Path,Critical Shift,Device Scaling,Dielectric Breakdown,Dielectric Reliability,Drain Voltage,Dynamic Power,Equivalent Thickness,Exponential Model,Exponential Voltage,Film Stack,Flicker Noise,Front End,General Purpose,Generation Technologies,HfO2 Gate Insulator,High Dielectric Constant,High Permittivity,Impact Of Relaxation,Increase In Temperature,Junction Temperature,Lifetime Extension,Lifetime Model,Lifetime Prediction,Likelihood Of Events,Low Thermal Conductivity,Low-power Devices,Major Candidate,