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B. Mervyn Armstrong
Also published under:B. M. Armstrong, Bm Armstrong
Affiliation
School of Electronics, Electrical Engineering and Computer Science, Queen's University Belfast, Belfast, U.K.
Topic
Silicon-on-insulator,Bipolar Transistor,High Voltage,Layer Thickness,Low Thermal Resistance,Reduction In Resistance,Thermal Conductivity,Thermal Resistance,Active Layer,Active Layer Thickness,Active Pixel Sensor,Barrier Height,Breakdown Strength,Buried Layer,Charge Collection Efficiency,Chip Detection,Complementary Technologies,Contact Pads,Conventional Substrates,DC Magnetron Sputtering,Deep Trench,Department Of Employment,Device Layer,Drain Contacts,Electronic Integration,Ellipsometry,Epitaxial,Field-effect Transistors,Gate Dielectric,Grain Boundaries,Grain Size,Heat Transfer,High Electron,High Electron Mobility,High Hole Mobility,High Packing Density,High Thermal Conductivity,High Thermal Resistance,I-V Curves,Impedance,Interfacial Layer,Junction Formation,Lateral Flow,Lumped Model,Min In Acetone,Oxide Thickness,Parasitic Capacitance,Passive Components,Pixel Pitch,Potential Well,
Biography
B. Mervyn Armstrong (M'97) received the B.Sc. and Ph.D. degrees in electrical and electronic engineering from Queen's University Belfast, in 1970 and 1973, respectively.
He is a Reader in Microelectronics in the School of Electronics, Electrical Engineering and Computer Science at Queen's University. He is also the Research Director for the Semiconductor and Nanotechnology cluster. His research interests are in the field of silicon wafer bonding, SOI technology, SiGe and germanium technology and devices, high frequency low power bipolar devices and MOS technology and devices. He has published more than 200 papers in related areas.
He is a Reader in Microelectronics in the School of Electronics, Electrical Engineering and Computer Science at Queen's University. He is also the Research Director for the Semiconductor and Nanotechnology cluster. His research interests are in the field of silicon wafer bonding, SOI technology, SiGe and germanium technology and devices, high frequency low power bipolar devices and MOS technology and devices. He has published more than 200 papers in related areas.