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R. Alizon
Affiliation
Electrical Engineering Department, Technion-Israel Institute of Technology, Haifa, Israel
Topic
Optical Amplifier,Quantum Dash,Gain Medium,Gain Spectrum,Cross-gain Modulation,Gain Saturation,Wave Mixing,Wetting Layer,Bitrate,Conversion Efficiency,Four-wave Mixing,Gain Bandwidth,Pump Power,Rate Equation,Saturation Power,Short Pulse,Wavelength Conversion,Active Region,Adjacent Regions,Amplified Spontaneous Emission,Applications In Optoelectronic Devices,Barrier Layer,Bit Error,Bit Error Rate,Bottom Of Page,Carrier Density,Coherent Interaction,Converter Module,Cross Saturation,Density Of States,Energy Levels,Excited State,Exemplary Results,Extinction Ratio,Eye Diagrams,Fast Kinetics,Fast Recovery Time,GaAs Substrate,Gain Characteristics,Height Distribution,Increasing Pump Power,Input Signal,Lasing Properties,Least Significant Bit,Lewis Structures,Modulation Rate,Most Significant Bit,Noise Spectrum,Optical Gain,Optical Noise,
Biography
R. Alizon received the Engineer's Diploma in electrical engineering from ENSSAT, Lannion, France, in 2001.
In March 2002, he joined the Optical Communication Laboratory at the Technion, Israel, as a Scientific Researcher within the framework of the French International Volunteer Exchange Program. His research deals with static and dynamical studies of quantum dash semiconductor lasers and optical amplifiers.
In March 2002, he joined the Optical Communication Laboratory at the Technion, Israel, as a Scientific Researcher within the framework of the French International Volunteer Exchange Program. His research deals with static and dynamical studies of quantum dash semiconductor lasers and optical amplifiers.