S. Bansropun

Carbon Nanotubes,Conductive,Dielectric Constant,Electrode,Grain Boundaries,Nanomaterials,Power Handling,Silicon Nitride,Actuator,Atomic Layer Deposition,Atomic Layer Deposition Technique,Au Nanorods,Bottom Contact,Breakdown Strength,Capacitive Switching,Carbon Contamination,Charge Collection,Charge Transport,Classical Physics,DC Conductivity,Diameter Of Nanorods,Dielectric Constant Values,Energy-dispersive X-ray Spectroscopy,Excess Oxygen,Fast Switching,Gold Nanorods,Grain Size,High Dielectric Constant,High Electric Field,High Field,High Leakage,High-k Materials,Incident Power,Lowest Strength,MEMS Switches,Measure Of Capacity,Mechanical Properties,Multi-walled Carbon Nanotubes,Nanoparticles,Percolation Paths,Percolation Threshold,Promising Material,RF Microelectromechanical System,RF Power,Reliable Improvement,Spring Constant,Switching Time,Thermochemical,X-band Applications,Diode Laser,