L. Altimime

Resistive Random Access Memory,Oxygen Vacancies,Resistive Switching,Atomic Layer Deposition,Bipolar Switching,Conduction Band,Conductive,Cycling,Electrical Characteristics,Electrode,I-V Curves,Pulse Amplitude,SET Pulse,Top Electrode,Activation Energy,Capacitor Structure,Capping Layer,Cell Size,Constriction,Discrete Energy Levels,Discrete Levels,Dynamic Balance,Energy Barrier,Energy Levels,High Resistance State,Impact Ionization,Non-volatile Memory,Oxide Film,Oxide Thickness,Properties Of Filaments,Pulse Width,Quantum Mechanical Model,Quantum Mechanics,Random Access Memory,Reactive Ion Etching,Reset Process,Switching Mechanism,Technology Node,Work Function,3D Simulation,Ab Initio,Ab Initio Simulation,Al2O3 Layer,Amount Of Oxygen Vacancies,Anatase,Anodic Oxidation,Array Size,As-deposited Films,Asymmetric Distribution,Back-end-of-line,