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D. Braun
Affiliation
Infineon Technologies, Essex Junction, VT, USA
Topic
Random Access Memory,Tunnel Junction,Access Time,Circuit Design,Current Mirror,Error Floor,Free Layer,Low Resistance State,Memory Technologies,Pulse Width,Read Operation,Reading Performance,Sense Amplifier,Test Chip,Test Circuit,Word Line,Array Elements,Checkers,Ferromagnetic,Resistance State,Scanning Electron Microscopy,Turnitin,
Biography
Daniel Braun received the M.A. degree in physics from the State Unviersity of New York (SUNY) at Stony Brook in 1990 as a Fulbright scholar and a scholar of the German Scholarship Foundation, the Diploma in physics from the University Stuttgart, Germany, in 1992, the Ph.D. degree in physics from the University Paris Sud, France, and the Habilitation degree in theoretical physics from the University Essen, Germany, in 2000.
He has been working on topics ranging from theoretical solid-state physics and chaos theory to quantum computing and quantum optics, and has authored or co-authored 36 technical publications, including one book. He joined Infineon Technologies' memory division in 2000, and has been working since then in the Magnetic RAM Development Alliance of IBM and Infineon, Essex Junction, VT, where he is currently responsible for functional test development, yield modeling and micromagnetic simulations.
He has been working on topics ranging from theoretical solid-state physics and chaos theory to quantum computing and quantum optics, and has authored or co-authored 36 technical publications, including one book. He joined Infineon Technologies' memory division in 2000, and has been working since then in the Magnetic RAM Development Alliance of IBM and Infineon, Essex Junction, VT, where he is currently responsible for functional test development, yield modeling and micromagnetic simulations.