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John Ellis-Monaghan
Also published under:J. Ellis-Monaghan, J. J. Ellis-Monaghan
Affiliation
RF Technology Development, RF Model Development, Bangalore, India
Topic
Figure Of Merit,Mach-Zehnder Modulator,Bill Of Materials,Bit Error Rate,Compressive Stress,Datapath,Device Fabrication Process,Electrode Length,Extinction Ratio,Eye Diagrams,Field-effect Transistors,Frequency Range Of Interest,Impedance Matching,Insertion Loss,Intercept Point,Low-noise Amplifier,Network Infrastructure,Noise Factors,Optical Index,Optical Interconnects,Oxide Growth,Packaging Costs,Packaging Technology,Parasitic Capacitance,Performance Metrics,Phase Shift,Power Consumption,Quality Factor,Shallow Trench Isolation,Silicon Photonics,Waveguide,Hot Electrons,Interface States,Monte Carlo Simulation,P-n Junction,Channel Length,Drain Current,Electron Injection,Gate Oxide,Impact Ionization,Silicon-on-insulator,Technology Node,Threshold Voltage,Analog-to-digital Converter,Average Energy,CMOS Technology,Electron Energy,Electron Energy Distribution,Energy Distribution,Gate Length,
Biography
John Ellis-Monaghan received the Ph.D. degree in electrical
engineering from N. C. State University, Raleigh, NC, USA, in 1995. He has worked and published papers on DRAM, SRAM,
high speed logic, CMOS imager, RF SOI, high-voltage devices, SiGe BiCMOS, and silicon photonics while working with
IBM's Specialty Foundry Group. He holds more than 100 U.S. patents. He is currently a Senior Technical Staff
Member with IBM's Systems and Technology Group in Essex Junction, VT, USA.