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M. Fukuta
Affiliation
Fujitsu Quantum Devices Ltd., Yamanashi, Japan
Topic
Artistic Research,Avalanche Photodiode,Bipolar Transistor,Business Impact,Electron Transport,Feedback System,Gate Array,Hot Electrons,Impact Of Devices,Large-scale Circuits,Negative Differential Resistance,Noise Figure,Optical System,Pump Laser,Radio Astronomy,Research And Development,Resonant Tunneling,Short Message,Static Random Access Memory,Thermal Expansion,Wavelength Division Multiplexing,Inverter,Output Power,Epitaxial Layer,Gate Length,Active Layer,Doping Density,Etching,Gate Width,N-type Layer,Chemical Vapor Deposition,Depletion Mode,Field-effect Transistors,Gate Electrode,Power MOSFETs,Schottky Diode,Transconductance,Carrier Mobility,Drain Current,Drain-source Voltage,Electrode,Fabrication Process,Gain Compression,High Breakdown Voltage,I-V Curves,Ionizing Radiation,Metal Gate,Microstrip,Microwave Power,Propagation Delay,
Biography
Masumi Fukuta (M'73) received the B.S. degree in electrical engineering from Nagoya Institute of Technology, Nagoya, Japan, in 1963 and the Ph.D. degree in electrical engineering from Nagoya University, Nagoya, Japan, in 1977.
In 1963, he joined Kobe Industries Co., which later merged with Fujitsu Ltd. From 1963 to 1973, he worked in the field of semiconductor devices including Si bipolar RF power transistors, Si MOSFETs, and power GaAs FETs. In 1967, he invented the “Mesh Emitter Transistor.” He presented the first paper of power GaAs FET at ISSCC '73. In 1974, he developed the first Si power MOSFET in $L$-band applications. From 1974 to 1980, he supervised development of HEMT, power GaAs FETs and GaAs ICs in Fujitsu Laboratories. After he moved from Fujitsu Laboratories to Compound Semiconductor Div. Fujitsu in 1980, he managed business on many compound semiconductor devices for microwave and optical applications. He is now president and CEO of Fujitsu Quantum Devices Ltd. He has been granted more than 20 patents and has written more than 40 technical papers. He authored the books Basis of GaAs FETs and Compound Semiconductor Devices for Internet Applications written in Japanese.
Dr. Fukuta received a prize medal from the Minister of Science and technology in Japan in 1975 for outstanding contribution to the development of power GaAs FETs. He received “Microwave Application Award” from IEEE MTT Society in 1988 “for recognition and demonstration of the potential of GaAs Field Effect Transistors for power applications.” He is a fellow member of the Institute of Electronics, Information and Communication Engineering of Japan.
In 1963, he joined Kobe Industries Co., which later merged with Fujitsu Ltd. From 1963 to 1973, he worked in the field of semiconductor devices including Si bipolar RF power transistors, Si MOSFETs, and power GaAs FETs. In 1967, he invented the “Mesh Emitter Transistor.” He presented the first paper of power GaAs FET at ISSCC '73. In 1974, he developed the first Si power MOSFET in $L$-band applications. From 1974 to 1980, he supervised development of HEMT, power GaAs FETs and GaAs ICs in Fujitsu Laboratories. After he moved from Fujitsu Laboratories to Compound Semiconductor Div. Fujitsu in 1980, he managed business on many compound semiconductor devices for microwave and optical applications. He is now president and CEO of Fujitsu Quantum Devices Ltd. He has been granted more than 20 patents and has written more than 40 technical papers. He authored the books Basis of GaAs FETs and Compound Semiconductor Devices for Internet Applications written in Japanese.
Dr. Fukuta received a prize medal from the Minister of Science and technology in Japan in 1975 for outstanding contribution to the development of power GaAs FETs. He received “Microwave Application Award” from IEEE MTT Society in 1988 “for recognition and demonstration of the potential of GaAs Field Effect Transistors for power applications.” He is a fellow member of the Institute of Electronics, Information and Communication Engineering of Japan.