Roberto Bez

Also published under:R. Bez

Affiliation

Process R&D, Micron Semiconductor Italia s.r.l., Agrate Brianza, Monza and Brianza, Italy

Topic

Power Consumption,Impedance,Memory Technologies,Non-volatile Memory,Storage Elements,Aspect Ratio,Conductive,Data Retention,Density Data,Gate Oxide,Heat Transfer,Low Cost,Low Power Consumption,Low Voltage,Memory Array,Memory Materials,Mobile App,Phase Change,Smartphone,Technology Node,Thermal Efficiency,Thin Films,Throughput,Activation Energy,Adaptive Algorithm,Amorphous,Amorphous Matrix,Amorphous Phase,Bipolar Transistor,CMOS Technology,Capping Layer,Carbon Film,Cell Size,Cell Structure,Charge Pump,Conductive Layer,Conductive Tip,Contact Resistance,Control In Order,Crystalline Phase,Current Pulse,Cyclic Experiments,Data Rate,Decoding Scheme,Decrease In The Melting Temperature,Diamond-like Carbon,Digital Control,Doping Profile,Electric Probe,Electrical Behavior,

Biography

Roberto Bez was born in Milan, Italy, in 1961. He received the Ph.D. degree in physics from the University of Milan, Milan, Italy, in 1987.
He is currently with the Department of Process R&D, Micron, Agrate Brianza, Milan, Italy. In 1987, he joined STMicrolectronics, and in 2008, he moved to Numonyx (when it was formed by STMicroelectronics and Intel). He was engaged in various nonvolatile memory technology development roles in his career with a focus on NOR and NAND Flash, phase change memory and new alternative non-volatile memories. He holds more than 30 patents. He has been a lecturer in Electron Device Physics and in Non-Volatile Memory Devices at different Italian and Foreign Universities.