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Giuseppe Ammendola
Also published under:G. Ammendola
Affiliation
Flash Memory Group-Research & Development, STMicroelectronics, Inc., Catania, Italy
Topic
Chemical Vapor Deposition,Hot Electrons,Memory Cells,Threshold Voltage,Non-volatile Memory,Oxide Thickness,Threshold Voltage Shift,Capacitive Coupling,Channel Length,Charge Trapping,Conventional Memory,Cycling,Data Retention,Direct Tunneling,Dot Density,Drain Voltage,Flash Memory,High Voltage,High-temperature Oxidation,Low Voltage,Nitride,Nitride Layer,Silicon Nanocrystals,Types Of Pain,Aspects Of Reliability,Buffered Oxide Etchant,CMOS Technology,Carrier Injection,Charge Migration,Charge Pump,Circuitry,Failure Analysis,Fast Program,Flash Device,Focused Ion Beam,Fractional Cover,Function Of Temperature,Gate Dielectric,Gate Oxide,High Temperature,Improvements In Factors,Larger Cell Size,Limited Scale,Loss Of Charge,Low Budget,Metal Gate,NOR Flash,Nm In Thickness,Processing Steps,Programming Voltage,
Biography
Giuseppe Ammendola was born in Naples, Italy, in 1974. He received the degree in physics (cum laude) from the University Federico II, Naples, in 1997, and the Ph.D. degree in physics from the University Federico II, Naples, in 2001, discussing a research thesis of superconducting devices.
In 2001, he joined the Central R&D Group of STMicroelectronics, Catania, Italy, working on Flash memories and nanocrystal floating-gate memories. He is currently a R&D Device Engineer in the Flash Memory Group-R&D, STMicroelectronics, and his activity is now focused on BCD devices' development. He has coauthored about 50 papers and is the holder of one patent.
In 2001, he joined the Central R&D Group of STMicroelectronics, Catania, Italy, working on Flash memories and nanocrystal floating-gate memories. He is currently a R&D Device Engineer in the Flash Memory Group-R&D, STMicroelectronics, and his activity is now focused on BCD devices' development. He has coauthored about 50 papers and is the holder of one patent.