Guillaume Agnus

Also published under:G. Agnus

Affiliation

Centre de Nanosciences et de Nanotechnologies (C2N), CNRS, University Paris-Sud, University Paris-Saclay, Palaiseau, France

Topic

Pulsed Laser Deposition,Active Layer,Active Layer Thickness,Active Material,Atomic Scale,Cladding Layer,Dielectric Constant,Dielectric Structure,Domain Wall,Domain Wall Dynamics,Dzyaloshinskii-Moriya Interaction,Effect Of Electric Field,Efficient Motion,Electrode,Ferroelectric,Ferroelectric Pb,Ferromagnetic,GaAs Substrate,Ion Transitions,Layer Thickness,Low Loss,Magnetron Sputtering,Molecular Beam Epitaxy,Nitrogen-vacancy Centers,Nonlinear Optical,Normal Incidence,Objective Lens,Opportunities For Studies,Optical Amplifier,Optical Characteristics,Optical Power,Optical Properties,Optical Signal,Oxidative Properties,Perpendicular Anisotropy,Perpendicular Magnetic Anisotropy,Photonic Integrated Circuits,Piezoelectric,Piezoresponse Force Microscopy,Pump Wavelength,Range Of Functions,Rare Earth Elements,Semiconductor Properties,Silicon Nitride,Silicon Photonics,Single Crystalline,Spin Hall Effect,Telecom Wavelengths,Thin Films,Two-photon Absorption,

Biography

Guillaume Agnus received the M.Sc. and Ph.D. degrees in nanosciences and technologies from the University of Paris-Sud, Orsay, France, in 2004 and 2007, respectively.
During his Ph.D., he investigated self-assembly of magnetic nanoparticles on patterned silicon substrates by molecular beam epitaxy. After two years as a Post-Doctoral Fellow with CEA, Saclay, France, he joined the C2N, Palaiseau, France, as an Assistant Professor, in 2009. His research is focused on functional oxides thin films, in particular their patterning and characterization as micro and nanodevices.