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Todora Angelova
Also published under:T. Angelova, Todora Ivanova Angelova
Affiliation
Nanophotonics Technology Center, Universitat Politècnica de València, Valencia, Spain
Topic
Electro-optic Modulator,Silicon Nitride,Silicon Waveguide,Electro-optic Response,High Voltage,Metallic State,Molecular Beam Epitaxy,Optical Loss,Photonic Devices,Plasma-enhanced Chemical Vapor Deposition,Refractive Index,Silicon Photonics,Static Response,Waveguide Width,Active Layer,All-optical Switching,Amorphous Silicon,Atomic Force Microscopy,Blue Shift,Change In Absorbance,Cladding Layer,Deionized Water,Detection Limit,Electric Power,Electro-optical Performance,Electrode,Electromagnetic Field,Electron Beam Lithography,Etching Depth,Figure Of Merit,Finite Element Method,Fluid Cells,Four-step Process,Free Carriers,Free Charge Carriers,Hot Electrons,Hybrid Platform,Hydrofluoric Acid,Hysteretic Behavior,Influence Of Stress,Integration Of Materials,Interface Trap,Intrinsic Stress,Linear Shift,Mach-Zehnder Modulator,Nanophotonic,Near-infrared Range,Nonlinear Optical,Numerical Aperture,Optical Absorption,
Biography
Todora Angelova received the M.S. degree in physics from Sofia’s University St. Kliment Ohridsky, Bulgaria, in 1998, and the Ph.D. degree from the Applied Physic Department, University of Valencia, Spain, in 2010. She is currently a Process Development Engineer with the Nanophotonics Technology Center of Valencia (NTC). Her research interests include the fabrication, characterization and application of graphene and thin film semiconductors materials and devices. In particular, she is active in experimental studies on Plasma Enhanced Chemical Vapour Deposition (PECVD) layers. Her work can also be filled with knowledge in characterization techniques like Raman scattering, Spectroscopic Ellipsometry and Atomic force microscopy (AFM).