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R. Behtash
Also published under:Reza Behtash
Affiliation
United Monolithic Semiconductors GmbH, Ulm, Germany
Topic
Degradation Mechanism,Drain Current,Gate Current,High Power,Power Density,Base Plate,Bulk Resistance,Contact Resistance,Critical Strength,Current Increases,Device Performance,Device Simulation,Distribution Of Devices,Drain Voltage,Electric Distribution,Electric Field Distribution,Epitaxial,Epitaxial Layer,European Project,European Sources,European Space Agency,GaN Layer,GaN Technology,Generation Mobile Communication,High Power Density,High Temperature,High Voltage,Hot Electrons,Hysteresis,Impact Of Layout,Impact Of Technology,Increase In Power,Interface Trap,Inverse Effect,Leakage Current Increases,National Project,Passivation Layer,Peak Electric Field,Peak Field,Piezoelectric,Power MOSFETs,Power Performance,Processing Technology,RF Performance,Saturation Power,Sheet Resistance,Sidewall,Space Applications,Term Stability,Thermal Conductivity,
Biography
Reza Behtash received the Diplom-Ingenieur degree (equivalent to the Masters degree) in electrical engineering from the Technical University Hamburg, Hamburg, Germany in 1999, and the Dr.-Ing. degree from Ulm University, Ulm, Germany, in 2006.
From 2000 to 2004, he carried out his dissertation about high-power AlGaN/GaN transistors and integrated power amplifiers at the DaimlerChrysler Research Center, Ulm, Germany. He is currently with the Ferdinand-Braun-Institut für Höchstfrequenztechnik (FBH), Berlin, Germany. He is also with United Monolithic Semiconductors, Ulm, Germany. His research interests include processing and characterization of GaN HEMTs and MMICs.
From 2000 to 2004, he carried out his dissertation about high-power AlGaN/GaN transistors and integrated power amplifiers at the DaimlerChrysler Research Center, Ulm, Germany. He is currently with the Ferdinand-Braun-Institut für Höchstfrequenztechnik (FBH), Berlin, Germany. He is also with United Monolithic Semiconductors, Ulm, Germany. His research interests include processing and characterization of GaN HEMTs and MMICs.