Federica Cappelluti

Also published under:F. Cappelluti, Fedeirca Cappelluti

Affiliation

DET - Politecnico di Torino, Torino, Italy

Topic

Solar Cells,Minority Carrier,Tandem Cells,Base Layer,Bipolar Transistor,Open-circuit Voltage,Radiative Recombination,Tunnel Junction,Active Layer,Artificial Intelligence Applications,Artificial Intelligence Systems,Back Reflector,Band Gap,Bandgap Engineering,Battery Capacity,Battery Charging,Beer-Lambert,Bipolar Structure,Bulk Carrier,Carrier Density,Carrier Injection,Carrier Lifetime,Commercial Solution,Current Matching,Current Measurements,Dark Curve,Dcdc Converter,Depletion Region,Device Performance,Diffraction Grating,Distribution Grid,Double Junction,Efficiency Of Solar Cells,Electric Power,Electric Vehicles,Electrochemical Impedance Spectroscopy,Emissive Layer,Energy Gap,Energy Harvesting,Energy Levels,Energy Use,Gallium Nitride,Green Transition,Halogen,Intermediate Band,Intrinsic Density,Junction Temperature,Light Traps,Low Voltage,Maximum Power Point,

Biography

Federica Cappelluti (S’02–M’03) was born in Ortona, Italy, in 1973. She received the Laurea degree in electronic engineering and the Ph.D. degree in electronic and communications engineering, both from the Politecnico di Torino, Turin, Italy, in 1998 and 2002, respectively.
She is currently an Assistant Professor with the Dipartimento di Elettronica, Politecnico di Torino. Her research interests include the circuit-level and physics-based modeling and simulation of semiconductor devices, with emphasis on active microwave and optoelectronic devices. She is also active in the fields of electrothermal modeling of power devices and stability analysis of nonlinear circuits.