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Donhee Ham
Also published under:D. Ham
Affiliation
John A. Paulson School of Engineering and Applied Sciences, Harvard University, Cambridge, MA, USA.
Topic
Analog-to-digital Converter,Nuclear Magnetic Resonance,Permanent Magnet,Nuclear Spin,Static Magnetic Field,Free Induction Decay,Magnetic Field,Gradient Coil,Input-referred Noise,Low-noise Amplifier,Magnetic Resonance Imaging,Memory Bank,Nuclear Magnetic Resonance Experiments,Pair Of Coils,Pulse Sequence,Radiofrequency Coil,Field Gradient,High-resolution Spectroscopy,Molecular Fingerprints,Nuclear Magnetic Resonance Signals,Nuclear Magnetic Resonance Spectra,Radiofrequency Pulse,Spectral Resolution,T2 Relaxation,Tube Diameter,2D Materials,Absorption Wavelength,Bacterial Aggregates,Bacterial Growth,CMOS Technology,Capacitive Coupling,Cardiomyocytes,Cell Biology,Characteristic Time,Closed-loop Modulation,Coherent Control,Complementary Metal Oxide Semiconductor Technology,Cryogenic Temperatures,Current Injection,Dead Time,Delay Line,Digital Capture,Digital Pulse,Drain Current,Dynamic Range,Echo Time,Electron Paramagnetic Resonance,Electron Spin,Electrophysiological Recordings,Electrophysiological Signals,
Biography
Donhee Ham (Fellow, IEEE) is currently a Gordon McKay Professor of applied physics and electrical engineering with Harvard University, Cambridge, MA, USA, where he has been a Faculty Member since 2002, and is a Samsung Fellow. His current research is on: semiconductor-bio interfaces for neuroscience, machine intelligence, and biological data archiving; scalable nuclear magnetic resonance (NMR); integrated circuits; neuromorphic and in-sensor computing; and beyond CMOS electronics.