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Muhammad Anisuzzaman Talukder
Also published under:M. A. Talukder, Muhammad A. Talukder
Affiliation
Electrical and Electronic Engineering, Bangladesh University of Engineering and Technology, Dhaka, Bangladesh
Topic
Conduction Band,Energy Conversion,Excited Electrons,Fluorophore,Material Systems,Surface Plasmon Resonance,Absorption Of Radiation,Band Offset,Biosensing Applications,Blackbody,Carrier Relaxation,Coupling Ratio,Critical Angle,Decrease In Fluorescence Intensity,Detection Limit,Detection Volume,Dielectric Constant,Diffraction Limit,Dimensional Array,Electronic Relaxation,Electronic Transitions,Emission Frequency,Emission Intensity,Energy State,Finite-difference Time-domain,Finite-difference Time-domain Simulations,Fluorescence Intensity,Glass Layer,Graphene Layers,Heat Source,Hemispherical,Higher Portion,Host Medium,I-V Curves,Incident Angle,Increase In Peak Intensity,Interfacial Layer,Internal Electric Field,Lifetime Of State,Limit Of Detection Values,Linear Features,Linear Model,Localized Surface Plasmon Resonance,Longitudinal Optical Phonon,Low-energy States,Lower Limit Of Detection,Lowest Limit Of Detection,Metal Layer,Metal Nanoparticles,Metal-dielectric Interface,
Biography
Muhammad Anisuzzaman Talukder joined the Electrical and Electronic Engineering Department, Bangladesh University of Engineering and Technology (BUET), Dhaka, Bangladesh, as a Lecturer, in early 2001, and has been serving as a Professor since 2014. He is also serving as the Director for the Research and Innovation Center for Science and Engineering, BUET. He also served at the University of Maryland, College Park, MD, USA, for several years as a Visiting Professor. He was with the University of Leeds, Leeds, U.K., from 2016 to 2018, as a Distinguished Marie-Curie Individual Fellow. He was an Honorary Fellow at the Hong Kong Polytechnic University, Hong Kong, from 2013 to 2015, and a Visiting Academic Fellow at the City, University London, London, U.K., in 2013.