Featured Authors

David Blaauw

Department of Electrical Engineering and Computer Science, University of Michigan, Ann Arbor, MI, USA

Nilmini Abeyratne

University of Michigan, Ann Arbor, MI, USA Intel Corporation, Santa Clara, CA, USA

Jeongseob Ahn

Korea University, Seoul, South Korea

Daehoon Kim

Yonsei University, Seoul, South Korea

Jung Ho Ahn

Seoul National University, Seoul, South Korea

Sanguhn Cha

Samsung Electronics, Hwaseong, Korea

Young Yong Byun

Memory Division, Samsung Electronics, Hwaseong, South Korea

Jonghyun Ahn

Memory Division, Samsung Electronics, Hwaseong, South Korea

Sung-Gi Ahn

Memory Division, Samsung Electronics, Hwaseong, South Korea

Sungoh Ahn

Memory Division, DRAM Design Team, Samsung Electronics, Hwaseong, South Korea