Florence Cubaynes

Gate Dielectric,Metal Gate,Gate Leakage,Gate Length,Gate Stack,Low-noise Amplifier,Threshold Voltage,Circuit Performance,Drain Current,Frequency Range,Measurement Frequency,Minimum Frequency,Oxide Thickness,Oxynitride,Planar Bulk,Quality Factor,Series Resistance,Subthreshold Slope,Work Function,Accumulation Regime,Accurate Way,Amorphous Silicon,Capacitive Impedance,Capacity Drop,Density Ratio,Design Guidelines,Device Fabrication,Device Parameters,Device Performance,Downscaling,Drain Voltage,Drain-source Current,Effect Of Depletion,Equivalent Circuit,External Resistance,Figure Of Merit,First Approximation,Function Parameters,Gate Capacitance,Gate Electrode,Gate Oxide,Gate-source Voltage,High Cut-off Frequency,High Leakage,High Voltage,High Voltage Gain,Impact Of Depletion,Impedance,Intrinsic Parameters,Junction Capacitance,