H. Beere

Also published under:H. E. Beere, Harvey E. Beere, Harvey Beere

Affiliation

Cavendish Laboratory, University of Cambridge, Cambridge, UK

Topic

Quantum Cascade Lasers,Back-gate Voltage,Photoemission,Potential Step,Terahertz Time-domain Spectroscopy,Top Gate,Amplitude Modulation,Chemical Vapor Deposition,DC Voltage,Dirac Point,Electromagnetically Induced Transparency,Electrostatic Gating,Field-effect Transistors,Heterostructures,Horizontal Polarization,Incident Radiation,Lift Off,Metamaterial,Polarizability,Polarization Mode,Quantum Mechanics,Spectral Amplitude,Spectral Phase,Split-ring Resonator,Temporal Pulse,Wireless,Work Function,2D Electron,AFM Tip,Antenna Array,Area Of Graphene,Array Of Resonators,Base Temperature,Carrier Concentration,Change In Ellipticity,Channel Width,Circuit Model,Condensed Matter,Conduction Band Edge,Cyclotron,DC Conductivity,Dark Mode,Delay Reduction,Detection Approach,Detection Principle,Device Fabrication,Dilution Refrigerator,Dipole Antenna,Double-gate,Drude Model,

Biography

Harvey E. Beere received the M.Eng. degree in electrical and electronic engineering from Imperial College, London, U.K., in 1993, and the Ph.D. degree in physics from the University of Cambridge, Cambridge, U.K., in 1999, working on the selective area growth of III–V semiconductor compounds using a focused ion beam source with molecular beam epitaxial (MBE) growth.
He is currently a Senior Research Associate with the Semiconductor Physics Group, University of Cambridge, where his research is focused on the growth and development of novel electrical and optical semiconductor devices, including quantum cascade lasers. He has more than 15 years of experience in MBE growth and has coauthored more than 200 papers.