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John Aitken
Also published under:J. Aitken, J. M. Aitken, John M. Aitken
Affiliation
IBM Microelectronics, Essex Junction, VT, USA
Topic
Dielectric Breakdown,Time-dependent Dielectric Breakdown,Acceleration Voltage,Breakdown Process,Breakdown Strength,Conduction Band,Cu Interconnects,Device Configuration,Failure Analysis,Global Variables,Ion Mobility,Local Variations,Low Field,Metal Gate,Percolation Theory,Ramp Rate,Role Of Cu,Technology Node,Voltage Stress,Voltage Sweep,Weibull Distribution,Activation Energy,Active Space,Advanced Technology Nodes,Anderson-Darling Test,Area Ratio,Arrhenius Equation,Band Alignment,Barrier Height,Behavior Of Samples,Bias Conditions,Bias Temperature Instability,Bimodal,Breakdown Model,Capping Layer,Cd Tolerance,Changes In Acceleration,Composition Distribution,Conduction Mechanism,Control Samples,Cupric Oxide,Deconvolution Method,Dielectric Layer,Dimensions Of Scale,Distribution In Space,Double Logarithmic,Duty Cycle,Electrical Method,Electrode,Electromigration,
Biography
John M. Aitken (SM'92) received the B.S. degree in physics from Fordham University, Bronx, NY, and the M.S. and Ph.D. degrees in physics/materials science from Rensselaer Polytechnic Institute, Troy, NY.
In 1974, he was with the IBM T.J. Watson Research Center. He is currently a Senior Technical Staff Member with the IBM Burlington, Essex Junction, VT, managing the Semiconductor Technology Reliability Engineering Department evaluating the reliability of new technologies and materials for advanced semiconductor device technologies. He is also currently an Adjunct Professor with the University of Vermont, Burlington. He has numerous technical publications and patents in the area of semiconductor devices, materials, and physics.
Dr. Aitken is a past committee member and General Chairman of the International Electron Devices Meeting. He is a past member of the IEEE Awards Committee and the Chair of the Cledo Brunetti Award Committee. He is an IBM representative to the Semiconductor Research Corporation Advisory Boards, acting as alternate Executive Committee member, and is a past member and chairman of the Process Integration and Device Technical Advisory Boards. Currently, he is a member of the SEMATECH Reliability Technical Advisory Board.
In 1974, he was with the IBM T.J. Watson Research Center. He is currently a Senior Technical Staff Member with the IBM Burlington, Essex Junction, VT, managing the Semiconductor Technology Reliability Engineering Department evaluating the reliability of new technologies and materials for advanced semiconductor device technologies. He is also currently an Adjunct Professor with the University of Vermont, Burlington. He has numerous technical publications and patents in the area of semiconductor devices, materials, and physics.
Dr. Aitken is a past committee member and General Chairman of the International Electron Devices Meeting. He is a past member of the IEEE Awards Committee and the Chair of the Cledo Brunetti Award Committee. He is an IBM representative to the Semiconductor Research Corporation Advisory Boards, acting as alternate Executive Committee member, and is a past member and chairman of the Process Integration and Device Technical Advisory Boards. Currently, he is a member of the SEMATECH Reliability Technical Advisory Board.