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Nihat Akkan
Affiliation
imec, Leuven, Belgium
Department of Physics and Astronomy, KU Leuven, Leuven, Belgium
Department of Physics and Astronomy, KU Leuven, Leuven, Belgium
Topic
Channel Length,Channel Width,Cis And Trans,Compact Model,Impedance,Model Parameters,Negatively Charged,Noise Contribution,Salt Concentration,Shot Noise,Signal-to-noise Ratio Improvement,Surface Charge,Thermal Noise,Threshold Voltage,Absolute Temperature,Access Resistance,Amplification Stage,Average Power Consumption,Behavioral Model,Bitrate,Boolean Logic,CMOS Process,CMOS Technology,Carrier Mobility,Complete Set Of Proteins,Control Input,Conventional Implementation,Corner Frequency,Current Source,Cylindrical Pores,Debye Length,Device Structure,Diffusion Coefficient,Diffusion Region,Drain Current,Drain Voltage,Effective Mobility,Electrolyte Solution,Electron Charge,Electroosmotic Flow,Fluidic,Gate Dielectric,Gate Electrode,Gate Oxide,High Resistance,Human Proteome,I-V Curves,Input-referred Noise,Ion Current,Low-pass,
Biography
NIHAT AKKAN received the BSc degree in electrical and electronics engineering from Hacettepe University, Ankara, Turkey, in 2011, and the MSc degree in electronics engineering from Yildiz Technical University (YTU), Istanbul, Turkey, in 2015. He is currently working toward the PhD degree and a research assistant in the Faculty of Electrical and Electronics Engineering, YTU, Istanbul, Turkey. His main research areas are compact modeling of organic and inorganic semiconductor devices, solid-state electronics, and circuit and system designs.