A. Bond

Bias Voltage,Distributed Feedback,Optical Power,Active Region,Electro-absorption Modulator,High Dynamic Range,Mach-Zehnder Modulator,Semiconductor Laser,Temperature Range,Wavelength Division Multiplexing,Bias Range,Capacity Of Devices,Depletion Width,Device Operation,Distributed Feedback Laser,Dynamic Range,Noise Figure,Optical Isolator,Optical Modes,P-n Junction,Quantum Wells,Solid-state Laser,Alloy Composition,Analog Transmitter,Beam Expander,Bias Point,Binary Alloys,Bit Error Rate,Bragg Reflector,Broad Temperature,Broad Temperature Range,Built-in Field,Carrier Frequency,Changes In Index,Changes In Width,Cladding Layer,Composite Materials,Conduction Band,Control Chart,Conventional Packaging,DC Bias,DC Bias Voltage,Data Rate,Depletion Mode,Depth Of Well,Device Area,Device Length,Device Structure,Dispersal Range,Dispersion Compensation,