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Wolfgang Bronner
Also published under:W. Bronner
Affiliation
Fraunhofer Institute for Applied Solid State Physics IAF, Freiburg, Germany
Topic
Output Power,Disk Laser,High Power,Active Region,Capping Layer,Commercial Laser,Differences In Efficiency,Diode Laser,Distinct Wavelengths,Distributed Bragg Reflector,Efficiency Range,Emission Wavelength,Frequency Range,Heat Distribution,Heat Extraction,Heat Removal,Heat Sink,Heat Spreader,Heat Transfer,High Power Amplifier,High Power Efficiency,High-resolution Spectroscopy,Inverse Approach,Large Gain,Large Signal,Linewidth,Longer Wavelengths,Material Processing,Material Systems,Maximum Output Power,Optical Pumping,Optimal Conditions,Output Matching,Peak Output Power,Polycrystalline Diamond,Power Amplifier,Power Scaling,Pump Power,Pump Wavelength,Quantum Wells,Resonant Modes,Single Transistor,Smith Chart,Temperature Distribution,Temperature Rise,Thermal Conductivity,Thermal Resistance,Thermal Simulation,Thermal Stress,Waste Heat,
Biography
Wolfgang Bronner was born in Kandern, Germany, in 1956. He received
the Diploma and the Ph.D. degrees in physics from Albert-Ludwigs-Universität, Freiburg, Germany, in 1984 and
1989, respectively.
In 1984, he joined the Fraunhofer Institut Solare Energiesysteme, Freiburg, where he investigated the heteroepitaxy of GaAs on Si and GaAs/SiO2 for solar cell applications. Since 1991, he has been with the Fraunhofer Institut für Angewandte Festkörperphysik, Freiburg, involved in research on III–V technology. He is involved in the process development and fabrication technologies of various electronic and optoelectronic devices, such as GaN HEMTs as well as quantum cascade lasers and semiconductor disk lasers.
In 1984, he joined the Fraunhofer Institut Solare Energiesysteme, Freiburg, where he investigated the heteroepitaxy of GaAs on Si and GaAs/SiO2 for solar cell applications. Since 1991, he has been with the Fraunhofer Institut für Angewandte Festkörperphysik, Freiburg, involved in research on III–V technology. He is involved in the process development and fabrication technologies of various electronic and optoelectronic devices, such as GaN HEMTs as well as quantum cascade lasers and semiconductor disk lasers.