R. Aidam

Amplification Stage,Amplifier Circuit,Back-gate Voltage,Band Gap,Bias Voltage,Circuit Design,Circuit Level,Commercial Laser,Diode Characteristics,Disk Laser,Distinct Wavelengths,Double-gate,Drain Bias,Drain Current,Effective Width,Electron Beam,Emission Wavelength,Epitaxial Growth,Etching,GaAs Substrate,Gate Electrode,Gate Length,Gate Width,Hall Measurements,Heterostructures,High Drain,High Electron Mobility Transistors,High-resolution Spectroscopy,Linewidth,MMIC Technology,Matching Network,Material Processing,Material Systems,Metal Stack,Nm-thick Layer,Output Power,Output Power Density,Output Stage,Parasite,Planar Devices,Plasma-enhanced Chemical Vapor Deposition,Positive Voltage,Resonant Modes,Si Substrate,Silicon Substrate,Standard Technology,Subthreshold Slope,Total Width,Transconductance,Types Of Pain,